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參數(shù)資料
| 型號(hào)： | 2SC5032 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 中文描述： | 3 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220E |
| 封裝： | TO-220E, FULL PACK-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 2SC5032 |
1
Power Transistors
2SC5032
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
I
Features
G
High-speed switching
G
High collector to base voltage V
CBO
G
Wide area of safe operation (ASO)
G
Satisfactory linearity of foward current transfer ratio h
FE
G
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
500
500
400
7
6
3
1.2
30
2
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
C
C
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 500V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 2V, I
C
= 1.2A
I
C
= 1.5A, I
B
= 0.3A
I
C
= 1.5A, I
B
= 0.3A
V
CE
= 10V, I
C
= 0.2A, f = 1MHz
I
C
= 1.5A, I
B1
= 0.15A, I
B2
= – 0.3A,
V
CC
= 200V
min
400
10
8
typ
10
max
100
100
40
1.0
1.5
1.0
3.0
0.3
Unit
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
μ
s
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
9.9
±
0.3
2
3
1
4.6
±
0.2
2.9
±
0.2
2.6
±
0.1
2.54
±
0.2
5.08
±
0.4
0.75
±
0.1
1.2
±
0.15
1.45
±
0.15
1
±
0
1
+
–
φ
3.2
±
0.1
3
±
0
8
±
0
4
±
0
S
0.7
±
0.1
7
°
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| 2SC5035 | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 2SC5036 | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 2SC5036A | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5034 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 2SC5035 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 2SC5036 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 2SC5036A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 2SC5037 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type |
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