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參數(shù)資料
| 型號(hào)： | 2SC5060TV2M |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ATV, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | 2SC5060TV2M |
2SC5060
Transistors
Rev.A
1/3
Power transistor (90
±10V, 3A)
2SC5060
Features
1) Built-in zener diode between collector and base.
2) Zener diode has low voltage dispersion.
3) Strong protection against reverse power surges due to “L”
loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
Equivalent circuit
R2
R1
B
C
E
C
B
E
: Base
: Collector
: Emitter
R1
3k
R2
1k
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
90
±10
90
±10
6
1
2
1
2
150
55 to +150
Unit
V
A(DC)
A(Pulse)
W
°C
1 Single pulse Pw=10ms
2 Printed circuit board : 1.7 mm thick, collector copper plating at least 100mm2.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Packaging specifications and hFE
Type
2SC5060
ATV
M
TV2
2500
Package
hFE
Code
Basic ordering unit (pieces)
External dimensions (Unit : mm)
(1) Emitter
(2) Collector
(3) Base
0.45
1.05
Taping specifications
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
ROHM : ATV
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
80
1000
80
20
100
10
3
1.5
5000
V
A
mA
V
MHz
pF
IC
=50A
IC
=1mA
VCB
=70V
VEB
=5V
IC/IB
=500mA/1mA
VBE(sat)
2
1
2
1
VIC/IB
=500mA/1mA
VCE
=3V, IC=0.5A
VCB
=5V, IE=0.1A, f=30MHz
VCE
=10V, IE=0A, f=1MHz
ton
0.2
s
IC
=0.8A, RL=50
tstg
5
s
IB1
= IB2=8mA
tf
0.6
s
VCC
40V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVEBO
6
VIE
=5mA
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Base-emitter saturation voltage
Turn-on time
Storage time
Fall time
1 Measured using pulse current. 2 Transition frequency of the device.
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