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參數(shù)資料
| 型號(hào)： | 2SC5087R |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
| 中文描述： | 瑞展硅型甚高頻?超高頻波段低噪聲放大器的應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 100K |
| 代理商： | 2SC5087R |
2SC5087R
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5087R
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure, high gain.
NF = 1.1dB, |S
21e
|
2
= 13dB (f = 1 GHz)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
20
V
Collector-emitter voltage
V
CEO
12
V
Emitter-base voltage
V
EBO
3
V
Base current
I
B
40
mA
Collector current
I
C
80
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Microwave Characteristics
(Ta
=
25°C)
Characteristic
Symbol
Condition
Min
Typ.
Max
Unit
Transition frequency
f
T
V
CE
= 10 V, I
C
= 30 mA
6
8
GHz
S
21e
2
(1)
V
CE
= 5 V, I
C
= 20 mA, f = 1 GHz
12.5
Insertion gain
S
21e
2
(2)
V
CE
= 10 V, I
C
= 30 mA, f = 1 GHz
11
13.5
Noise figure
NF
V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
1.1
2
dB
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Symbol
Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
=
10 V, I
E
=
0
1
μ
A
Emitter cut-off current
I
EBO
V
EB
=
1 V, I
C
=
0
1
μ
A
DC current gain
h
FE
V
CE
=
10 V, I
C
=
20 mA
120
240
Output capacitance
C
ob
1.1
1.6
pF
Reverse transfer capacitance
C
re
V
CB
=
10 V, I
E
=
0, f
=
1 MHz(Note 2)
0.65
1
pF
Note 1: C
re
is measured with a three-terminal method using a capacitance bridge.
Unit: mm
4.Emitter(E2)
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: 0.012 g (typ.)
1.Base(B)
2.Emitter1(E1)
3.Collector(C)
SMQ
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