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參數(shù)資料
| 型號： | 2SC5095-R |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-2E1A , SC-70, 3 PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 452K |
| 代理商： | 2SC5095-R |
Data Sheet D14650EJ2V0DS
5
2SJ605
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
50
0
50
100
150
ID= –33A
50
40
30
20
10
0
Pulsed
VGS = –4.0 V
–4.5 V
–10 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–1.0
ISD
-
Diode
Forward
Current
-
A
0
–1.5
VSD - Source to Drain Voltage - V
–0.5
Pulsed
–0.1
–1
–10
–100
–1000
0 V
VGS = –10 V
–2.0
–4 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
100
1000
10000
100000
–0.1
–1
–10
VGS = 0 V
f = 1 MHz
–100
Crss
Coss
Ciss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
10
1
–1
–0.1
100
1000
–10
–100
tf
tr
td(on)
td(off)
VDD = –30 V
RG = 0
VGS = –10 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-
Gate
to
Source
Voltage
-
V
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
040
60
20
80
100
–60
–50
–40
–30
–20
–10
0
–12
–10
–8
–6
–4
–2
0
ID = –65 A
VDS
VGS
VDD = –48 V
–30 V
–12 V
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
IAS
-
Single
Avalanche
Current
-
A
–10
–100
–1000
1 m10 m
VDD = –30 V
RG = 25
VGS = –20
→ 0 V
IAS = –45 A
10
100
–1
E
AS = 203
mJ
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相關代理商/技術參數(shù) |
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| 2SC5096 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SC5096FO | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 15MA I(C) | SOT-416VAR |
| 2SC5096FR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 15MA I(C) | SOT-416VAR |
| 2SC5096FT | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
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