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參數(shù)資料
| 型號： | 2SC5121 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type |
| 中文描述： | 0.07 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | ROHS COMPLIANT, TO-126B-A1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 38K |
| 代理商： | 2SC5121 |
1
Power Transistors
2SC5121
Silicon NPN triple diffusion planar type
For general amplification
I
Features
G
High collector to base voltage V
CBO
G
High collector to emitter V
CEO
G
Small collector output capacitance C
ob
G
TO-126 package, which is fitted to a heat sink without any insu-
lation parts
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
400
400
7
100
70
1.2
150
–55 to +150
Unit
V
V
V
mA
mA
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
Hot I
CEO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 300V, I
E
= 0
V
CE
= 380V, I
B
= 0, Ta = 80
°
C
I
C
= 100
μ
A, I
B
= 0
I
E
= 1
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
400
7
30
50
typ
80
4
max
10
10
150
1.2
8
Unit
μ
A
μ
A
V
V
V
MHz
pF
Unit: mm
1:Emitter
2:Collector
3:Base
JEDEC:TO–126(b)
1
±
0
1
±
1
1
±
0
3
±
0
3
±
0
3.2
±
0.2
0.5
±
0.1
0.75
±
0.1
0.5
±
0.1
1.76
±
0.1
8.0
+0.5
1
4.6
±
0.2
2.3
±
0.2
3
2
φ
3.16
±
0.1
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| 2SC5122 | NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING APPLICATIONS) |
| 2SC5125 | NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) |
| 2SC5127 | Silicon NPN triple diffusion planar type |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC51210P | 功能描述:TRANS NPN HF 400VCEO 70MA TO-126 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC5122 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING APPLICATIONS) |
| 2SC5122(F) | 制造商:Toshiba 功能描述:NPN |
| 2SC5122_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type |
| 2SC5124 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
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