參數(shù)資料
型號: 2SC5127A
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN triple diffusion planar type
中文描述: 1.5 A, 500 V, NPN, Si, POWER TRANSISTOR
封裝: TO-220E, FULL PACK-3
文件頁數(shù): 2/3頁
文件大?。?/td> 60K
代理商: 2SC5127A
2
Power Transistors
2SC5127/2SC5127A
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
f
T
— I
C
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
40
30
10
20
(1)
(3)
(4)
(2)
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
Ambient temperature Ta (C)
C
C
0
12
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
T
C
=25C
100mA
80mA
60mA
40mA
20mA
10mA
I
B
=150mA
Collector to emitter voltage V
CE
(V)
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=5
T
C
=100C
25C
–25C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.1
100
10
1
0.3
3
30
I
C
/I
B
=5
T
C
=–25C
25C
100C
B
B
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
1
1000
100
10
3
30
300
V
CE
=5V
–25C
T
C
=100C
25C
F
F
1
3
10
30
100
1
1000
100
10
3
30
300
I
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
C
o
0.01
0.03
0.1
0.3
1
0.1
100
10
1
0.3
3
30
V
=10V
f=1MHz
T
C
=25C
Collector current I
C
(A)
T
T
0
2.0
0.5
1.5
1.0
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
f
t
on
Pulsed t
=1ms
Duty cycle=1%
I
C
/I
B
=3.5
(2I
B1
=–I
B2
)
V
CC
=200V
T
C
=25C
Collector current I
C
(A)
S
o
,
s
,
f
μ
s
1
10
100
1000
3
30
300
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
Non repetitive pulse
T
C
=25C
10ms
DC
1ms
t=0.5ms
Collector to emitter voltage V
CE
(V)
C
C
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