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參數(shù)資料
| 型號(hào)： | 2SC5132A |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused Planar(三倍擴(kuò)散NPN晶體管) |
| 中文描述： | npn型三重?cái)U(kuò)散硅平面（三倍擴(kuò)散npn型晶體管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2SC5132A |
2SC5132A
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
V
CES
V
EBO
I
C
ic(surge)
1500
V
Emitter to base voltage
6
V
Collector current
8
A
Collector surge current
16
A
Collector power dissipation
P
C*1
T
j
T
stg
I
D
50
W
Junction temperature
150
°C
Storage temperature
–55 to +150
°C
Diode current
6
A
Note: 1. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min Typ Max Unit Test conditions
Emitter to base breakdown voltage V
(BR)EBO
Collector cutoff current
6
—
—
V
I
E
= 400 mA, I
C
= 0
V
CE
= 1500 V, R
BE
= 0
V
CE
= 5 V, I
C
= 1 A
I
C
= 5 A, I
B
= 1.25 A
I
CES
h
FE
V
CE(sat)
—
—
500
μA
DC current transfer ratio
—
—
25
—
Collector to emitter saturation
voltage
—
—
5
V
Base to emitter saturation voltage
V
BE(sat)
V
ECF
t
f
—
—
1.5
V
I
C
= 5 A, I
B
= 1.25 A
I
F
= 6 A
μsec I
CP
= 5 A, I
B1
= 1 A,
f
H
= 31.5kHz
Forward voltage of damper diode
—
—
2.0
V
Fall time
—
0.2
0.4
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