參數(shù)資料
型號(hào)： 2SC5139
廠商： Hitachi,Ltd.
英文描述： Silicon NPN Epitaxial
中文描述： npn型硅外延
文件頁數(shù)： 2/8頁
文件大?。?/td> 57K
代理商： 2SC5139
2SC5139
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
15
V
Collector to emitter voltage
8
V
Emitter to base voltage
1.5
V
Collector current
50
mA
Collector power dissipation
80
mW
Junction temperature
150
°
C
°
C
Storage temperature
Note:
Marking is “YZ–”.
Tstg
–55 to +150
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
boltage
V
(BR)CBO
15
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector cutoff current
I
CBO
I
CEO
I
EBO
h
FE
Cob
—
—
1
μ
A
V
CB
= 12 V, I
E
= 0
V
CE
= 8 V, R
BE
=
∞
V
EB
= 1.5 V, I
C
= 0
V
CE
= 4 V, I
C
= 20 mA
V
= 5 V, I
E
= 0,
f = 1 MHz
—
—
1
mA
Emitter cutoff current
—
—
10
μ
A
DC current transfer ratio
50
120
250
Collector output capacitance
—
0.65
1.15
pF
Gain bandwidth product
f
T
PG
8
11
—
GHz
V
CE
= 4 V, I
C
= 20 mA
V
= 4 V, I
C
= 20 mA,
f = 900 MHz
Power gain
11.5
15
—
dB
Noise figure
NF
—
1.1
2.0
dB
V
= 4 V, I
C
= 5 mA,
f = 900 MHz
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