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參數(shù)資料
| 型號(hào)： | 2SC5173 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, 2-10T1A, 3 PIN |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 137K |
| 代理商： | 2SC5173 |
2SC5173
2004-07-26
3
Base-emitter voltage VBE (V)
IC – VBE
Coll
ect
or
cur
re
nt
I
C
(m
A
)
T
ran
si
en
tth
er
ma
lr
e
si
st
an
ce
r th
(
°C
/W
)
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C)
rth – tw
Safe Operating Area
C
ollec
tor
po
wer
dis
si
pati
on
P
C
(W
)
PC – Ta
Collector current IC (mA)
fT – IC
T
ran
si
tion
fr
eq
ue
nc
y
f T
(M
Hz)
Collector-base voltage VCB (V)
Cob – VCB
C
ollec
tor
o
ut
pu
tca
pa
ci
ta
nce
C
ob
(pF
)
Co
llect
or
cu
rre
nt
I C
(
m
A
)
Pulse width tw (s)
100
IE = 0
f = 1 MHz
Ta = 25°C
50
1
30
5
3
1
3
10
30
300
10
100
0
0.2
80
20
0.4
0.6
0.8
Common emitter
VCE = 10 V
25
1.0
Ta = 100°C
60
40
1.2
25
10
30
Common emitter
Ta = 25°C
500
0.3
300
50
30
10
1
3
10
100
VCE = 20 V
5
100
0
25
50
75
100
125
175
0.4
1.6
2.0
1.2
0.8
150
10
Curves should be applied in thermal limited
area. (single nonrepetitive pulse)
Ta = 25°C
0.001
0.1
1
0.01
0.1
1
10
100
1000
0.3
0.5
1
3
5
100
30
50
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly with
increase in temperature.
3
1
5
10
300
30
100
IC max (continuous)
IC max (pulsed)*
1 ms
10 ms*
100 ms*
DC operation
Ta = 25°C
10
300
VCEO
max
500 ms*
300 s*
3
500
50
5
30
50
100
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5173_04 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Voltage Switching and Amplifier Applications |
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| 2SC5174(TP,Q) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 230V 1A TPL |
| 2SC5174_04 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Amplifier Applications |
| 2SC5175 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL TYPE (HIHG CURRENT SWITCHING APPLICATIONS) |
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