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參數(shù)資料
| 型號(hào)： | 2SC5183-T2FB |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-59, 4 PIN |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大小： | 50K |
| 代理商： | 2SC5183-T2FB |
3
2SC5183
CHARACTERISTICS CURVES (TA = 25 C)
25
0
20
15
10
5
1.0
2.0
3.0
COLLECTOR TO CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
IC
-
Collector
Current
-
mA
VCE - Collector to Emitter Voltage - V
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
0
50
200
100
0
50
100
150
40
30
20
10
0.5
1.0
TA - Ambient Temperature - °C
VBE - Base to Emitter Voltage - V
P
T
-
Total
Power
Dissipation
-
mW
IC
-
Collector
Current
-
mA
VCE = 2 V
90 mW
IB = 20 A
40 A
60 A
80 A
100 A
120 A
140 A
160 A
180 A
200 A
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
1
14
16
1
2
5
10
12
10
8
6
IC - CollectorCurrent - mA
IC - Collector Current - mA
fT
-
Gain
Bandwidth
Product
-
GHz
14
12
10
8
6
4
2
f = 2 GHz
4
f = 2 GHz
20
50
100
2 V
VCE = 1 V
2
5
10
20
50
100
2 V
VCE = 1 V
|S
21e
|2
-
Insertion
Power
Gain
-
dB
IC - Collector Current - mA
h
FE
-
DC
Current
Gain
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
10
20
50
1
2
5
10
20
50
100
VCE = 2 V
VCE = 1 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5184 | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 2SC5184T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-323 |
| 2SC5184-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5184-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5185 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
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