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參數(shù)資料
| 型號： | 2SC5186FB |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 48K |
| 代理商： | 2SC5186FB |
2
2SC5186
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Collector Cutoff Current
ICBO
100
nA
VCB = 5 V, IE = 0
Emitter Cutoff Current
IEBO
100
nA
VEB = 1 V, IC = 0
DC Current Gain
hFE
70
140
VCE = 2 V, IC = 20 mA*1
Insertion Power Gain (1)
|S21e|2
8.5
10
dB
VCE = 2 V, IC = 20 mA, f = 2 GHz
Insertion Power Gain (2)
|S21e|2
6.0
7.5
dB
VCE = 1 V, IC = 10 mA, f = 2 GHz
Noise Figure (1)
NF
1.3
2.0
dB
VCE = 2 V, IC = 3 mA, f = 2 GHz
Noise Figure (2)
NF
1.3
2.0
dB
VCE = 1 V, IC = 3 mA, f = 2 GHz
Gain Bandwidth Product (1)
fT
911
GHz
VCE = 2 V, IC = 20 mA, f = 2 GHz
Gain Bandwidth Product (2)
fT
79
GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
Feed-back Capacitance
Cre
0.4
0.8
pF
VCB = 2 V, IE = 0 mA, f = 1 MHz*2
*1
Measured with pulses: Pulse width
≤ 350
s, duty clcye ≤ 2 %, pulsed.
*2
Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal
of the bridge.
hFE Class
Class
FB
Marking
86
hFE
70 to 140
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