- 您現(xiàn)在的位置：買賣IC網 > PDF目錄41503 > 2SC5191-T2FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF資料下載
參數資料
| 型號： | 2SC5191-T2FB |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-59, 3 PIN |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 2SC5191-T2FB |
SILICON TRANSISTOR
2SC5191
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. P10395EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
1994
FEATURES
Low Voltage Operation, Low Phase Distortion
Low Noise
NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
Large Absolute Maximum Collector Current
IC = 100 mA
Mini Mold Package
EIAJ: SC-59
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC5191-T1
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 3 (collector) face to perforation side of the tape.
2SC5191-T2
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 1 (Emitter), Pin 2 (Base) face to perforation side
of the tape.
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
9V
Collector to Emitter Voltage
VCEO
6V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
100
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
PACKAGE DRAWINGS
(Unit: mm)
2.8±0.2
2.9±0.2
0.65
1.5
3
1
Marking
2
+0.1
0.15
0.4
0.95
+0.1
0.05
0.16
0
to
0.1
0.3
1.1
to 1.4
+0.1
0.06
0.4
+0.1
0.05
T88
0.95
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC5193-T1FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5193-T1FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5193-T2FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5193-T2FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5193-FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5192 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
| 2SC5192(NE68839) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5192-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
| 2SC5192-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
| 2SC5193 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD |
發(fā)布緊急采購，3分鐘左右您將得到回復。