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參數(shù)資料
| 型號(hào)： | 2SC5289 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
| 中文描述： | NPN硅外延晶體管L波段低功率放大器 |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | 2SC5289 |
2SC5289
7
CHARACTERISTICS CURVES
30
25
20
15
10
5
80
60
40
20
0
8
7
6
5
4
30
20
10
0
G
P
(dB)
I
C
(mA)
5
10
15
20
25
G
P
I
C
P
o
P
IN
(dBm)
P
out
OUTPUT POWER / COLLECTOR EFFICIENCY / COLLECTOR CURRENT /
POWER GAIN VS. INPUT POWER
f = 1.9 GHz, V
CC
= 3.6 V,
I
Cq
= 1 mA (Duty1/8)
(%)
η
C
η
(Reference) Data from the above graph
P
–1
27.5
dBm
η
C
(at P
–1
)
72
%
I
C
(at P
–1
)
27
mA
G
L
6.7
dB
Note
I
Cq
is stand for the collector current when input power off.
Above the I
Cq
and I
C
are showing current value at 1/8 duty operation.
In case of CW (continuous wave) operation, the current value becomes eight times.
Actual bias condition; V
CE
= 3.6 V, I
Cq
= 8 mA @ Pin = OFF.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5289(NE69039) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5289T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 300MA I(C) | SOT-143R |
| 2SC5289-T1-A-KB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5291 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Voltage Switching Applications |
| 2SC5291R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP |
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