- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371515 > 2SC5295J (PANASONIC CORP) For 2 GHz Band Low-Noise Amplification PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SC5295J |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | For 2 GHz Band Low-Noise Amplification |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SSMINI3-F1, SC-89, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 66K |
| 代理商： | 2SC5295J |
Transistors
2SC5295J
Silicon NPN epitaxial planar type
1
Publication date: December 2002
SJC00283BED
For 2 GHz band low-noise amplification
■
Features
High transition frequency f
T
Low collector output capacitance (Common base, input open cir-
cuited) C
ob
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
10 V, I
E
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
8 V, I
C
=
20 mA
V
CE
=
8 V, I
C
=
15 mA, f
=
1.5 GHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
1
μ
A
μ
A
Emitter-base cutoff current (Collector open)
I
EBO
h
FE
1
Forward current transfer ratio
*
50
170
Transition frequency
f
T
C
ob
7.0
8.5
GHz
Collector output capacitance
(Common base, input open circuited)
0.6
1.0
pF
Foward transfer gain
S
21e
2
G
UM
V
CE
=
8 V, I
C
=
15 mA, f
=
1.5 GHz
V
CE
=
8 V, I
C
=
15 mA, f
=
1.5 GHz
V
CE
=
8 V, I
C
=
7 mA, f
=
1.5 GHz
7
9
dB
Maximum unilateral power gain
10
dB
Noise figure
NF
2.2
3.0
dB
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
V
Collector-emitter voltage (Base open)
V
CEO
10
V
Emitter-base voltage (Collector open)
V
EBO
I
C
2
V
Collector current
65
mA
Collector power dissipation
P
C
125
mW
Junction temperature
T
j
T
stg
125
°
C
°
C
Storage temperature
55 to
+
125
Marking Symbol: 3S
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank
Q
R
h
FE
50 to 120
100 to 170
0.27
±
0.02
3
1
2
0.12
+0.03
0
±
0
(
0
1
±
0
0
0
0
+
–
(
5
5
1.60
+0.05
1.00
±
0.05
(0.50)(0.50)
+
–
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5295 | Silicon NPN epitaxial planer type(For 2 GHz band low-noise amplification) |
| 2SC5295Q | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SC5295R | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-416 |
| 2SC5295S | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SC5300 | Ultrahigh-Definition Color Display Horizontal Deflection Output Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5295Q | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-416 |
| 2SC5295R | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-416 |
| 2SC5295S | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-416 |
| 2SC5296 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SC5297 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。