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參數(shù)資料
| 型號： | 2SC5337QS |
| 英文描述： | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 250MA I(C) | TO-243 |
| 中文描述： | 晶體管|晶體管|叩| 15V的五（巴西）總裁|毫安一（c）|至243 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 47K |
| 代理商： | 2SC5337QS |
2SC5304
No.5883-2/3
2
3
5
7
10
1.0
2
3
5
7
100
2
3
5
7
0.01
0.1
2
3
5
7
1.0
2
3
5
7
10
2
4
6
10
8
0
1
2
3
4
5
6
7
0
35
7
0.1
35
7
1.0
23
5
7
10
2
3
5
7
1.0
0.1
2
3
5
7
10
35
7
0.1
35
7
1.0
23
5
7
10
2
3
5
7
1.0
2
3
5
7
0.1
0.01
2
3
5
7
10
35
7
0.1
35
7
1.0
23
5
7
10
2
1.0
0.1
35
7
10
2
35
7
72
02
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
hFE - I C
I C– VCE
I C - VBE
VCE(sat) - I C
VBE(sat) - I C
SW Time - I C
IB= 0
2.0A
0.2A
0.4A
0.6A
0.8A
1.0A
1.2A
1.4A
1.8A
1.6A
VCE=5V
T
a
=
120
°C
25
°C
–4
0°
C
25°C
–40°C
Ta=120°C
VCE=5V
–
40
°C
25
°C
Ta
=
120
°C
IC/IB=5
120°C
Ta=–40
°C
25°C
VCC= 200V
IC/IB1=5
IB2/IB1=2
R load
tf
tstg
DC
Current
Gain,h
FE
Collector Current, IC – A
Collector Current, IC –A
Collector
Current,
I
C
–A
Collector-to-Emitter Voltage, VCE –V
Collector
Current,
I
C
–A
Collector Current, IC –A
Base-to-Emitter Voltage, VBE –V
Collector–to–Emitter
Saturation
Voltage,
V
CE
(sat)
–V
Collector Current, IC –A
Base–to–Emitter
Saturation
Voltage,
V
CE
(sat)
–V
Switching
Time,
SW
Time
–
s
IB1
IB2
VOUT
RC
VCC
IB1
0.1 VOUT
IB2
VOUT
tstg
tf
0.9 VOUT
Switching Time Test Circuit
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| 2SC5338SE-T1 | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 150MA I(C) | TO-243VAR |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5337QS-T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 250MA I(C) | TO-243 |
| 2SC5337-T1 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:NPN Silicon RF Transistor for High-Frequency |
| 2SC5337-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 15V 0.25A 4-Pin(3+Tab) Power Mini-Mold T/R Cut Tape |
| 2SC5337-T1-AZ-QR | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5337-T1-AZ-QS | 制造商:Renesas Electronics Corporation 功能描述: |
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