參數(shù)資料
型號(hào): 2SC5338
廠商: NEC Corp.
英文描述: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
中文描述: npn型外延硅晶體管高頻低失真功率放大器
文件頁(yè)數(shù): 1/10頁(yè)
文件大?。?/td> 71K
代理商: 2SC5338
Silicon Transistor
2SC5338
NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY LOW DISTORTION AMPLIFIER
1996
Document No. P10940EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
PRELIMINARY DATA SHEET
DESCRIPTION
The 2SC5338 is designed for a low distortion and low noise RF amplifier with an operation on the low supply
voltage (V
CE
= 5 V). This low distortion characteristics is suitable for the CATV, tele-communication, and such.
FEATURES
High gain
|S
21
|
2
= 10 dB TYP., @V
CE
= 5 V, Ic = 50 mA, f = 1 GHz
Low distortion and low voltage
IM
2
=
55 dB TYP., IM
3
=
76 dB TYP.
@V
CE
= 5 V, Ic = 50 mA, V
in
= 105 dB
μ
V/75
New power mini-mold package version of a 4-pin type
gain-improved on the 2SC4703
PACKAGE DIMENSIONS
(in millimeters)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
V
CBO
25
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
2.5
V
Collector Current
I
C
150
mA
Total Power Dissipation
P
T
Note1
1.8
W
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
–65 to +150
°
C
Note 1
. 0.7 mm
×
16 cm
2
double sided ceramic substrate (Copper plaiting)
1.6±0.2
2
3
1.5±0.1
0.25±0.02
0.42
±0.06
0.46
±0.06
3.0
1.5
0.42
±0.06
0
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
C
E
B
E
4.5±0.1
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