參數(shù)資料
型號(hào): 2SC5368
元件分類: 功率晶體管
英文描述: 2 A, 450 V, NPN, Si, POWER TRANSISTOR
封裝: LEAD FREE, 2-8H1A, 3 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 139K
代理商: 2SC5368
2SC5368
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5368
High-Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
High speed: tr = 0.5 s (max), tf = 0.3 s (max) (IC = 0.8 A)
High breakdown voltage: VCEO = 450 V
High DC current gain: hFE = 20 (min) (IC = 0.2 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
650
V
Collector-emitter voltage
VCEO
450
V
Emitter-base voltage
VEBO
7
V
DC
IC
2
Collector current
Pulse
ICP
4
A
Base current
IB
0.5
A
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
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