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參數(shù)資料
| 型號： | 2SC5369 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | MINIMOLD PACKAGE-6 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大小： | 272K |
| 代理商： | 2SC5369 |
2SC5369
2
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
0.1
A
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
0.1
A
DC Current Gain
hFE
VCE = 3 V, IC = 10 mANote 1
80
160
Gain Bandwidth Product
fT
VCE = 3 V, IC = 10 mA, f = 2.0 GHz
14
GHz
Feed-back Capacitance
Cre
VCB = 3 V, IE = 0, f = 1 MHzNote 2
0.15
0.25
pF
Insertion Gain
| S21e | 2
VCE = 3 V, IC = 10 mA, f = 2.0 GHz
12
14
dB
Noise Figure
NF
VCE = 3 V, IC = 3 mA, f = 2.0 GHz
1.3
2.3
dB
STANDARD SPECIFICATION
FB
Marking
T95
hFE
80 to 160
Notes 1. Pulse measurement: PW
≤ 350
s, Duty cycle ≤ 2 %, Pulsed
2. Measure by using 3-terminal bridge with emitter pin connected to guard terminal of bridge.
TYPICAL CHARACTERISTICS (TA = 25
°C)
0
50
100
150
100
200
PT - TA CHARACTERISTICS
Ambient Temperature TA (
°C)
Total
Power
Dissipation
P
T
(mW)
0
0.5
1.0
20
40
IC - VBE CHARACTERISTICS
DC Base Voltage VBE (V)
Collector
Current
I
C
(mA)
VCE = 3 V
10
30
50
02
6
8
10
30
IC - VCE CHARACTERISTICS
Collector to Emitter Voltage VCE (V)
Collector
Current
I
C
(mA)
10
50
200
hFE - IC CHARACTERISTICS
Collector Current IC (mA)
DC
Current
Gain
h
FE
VCE = 3 V
20
500
20
4
Ie = 200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
20 A
100
12
5
20
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5369(NE696M01) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC536D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SC536E | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR (I) |
| 2SC536F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | TO-92 |
| 2SC536G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | TO-92 |
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