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參數(shù)資料
| 型號： | 2SC536KNPF |
| 英文描述： | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 中文描述： | 晶體管|晶體管|叩| 50V五（巴西）總裁| 100mA的一（c）|至92 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大小： | 47K |
| 代理商： | 2SC536KNPF |
2SC5304
PS No.5883-3/3
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of June, 1998. Specifications and information herein are subject to
change without notice.
2
3
5
7
0.01
0.1
2
3
5
7
1.0
2
3
5
7
10
1.0
35
7
2
35
7
0.1
72
2
3
5
7
10
2
3
5
7
1.0
2
3
5
7
0.1
2
3
10
35
7
2
100
35
7
23
5
7
2
Forward Bias A S O
SW Time - I B2
P
C =35W
VCC= 200V
IC= 3.5A
IB1=0.7A
R load
tf
tstg
PT<50
s
I C
I CP
100
s
300
s
1ms
10
ms
D
C
operation
Tc = 25
°C
1pulse
Collector–to–Emitter Voltage, VCE –V
Collector
Current,
I
C
–A
Base Current, IB2 –A
Switching
Time,
SW
Time
–
s
80
100
120
140
160
60
40
20
0
80
100
120
140
160
60
40
20
0
20
10
30
35
40
0
0.5
2.0
1.5
1.0
2.5
PC - Ta
PC - Tc
Reverse Bias A S O
0.1
1.0
2
3
5
10
7
2
3
5
7
2
3
5
100
7
1000
23
5
52
7
Collector
Dissipation,
P
C
–W
Collector
Dissipation,
P
C
–W
Ambient Temperature, Ta –
°C
Case Temperature, Tc –
°C
Collector-to-Emitter Voltage, VCE –V
No
heat
sink
L=200
H
IB2=–1A
Tc=25
°C
1pulse
Collector
Current,
I
C
–A
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC536KNPG | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SC536KNPH | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SC536NP | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SC536NPD | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SC536NPE | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC536KNPG | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SC536KNPH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SC536N | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Low-Frequency General-Purpose Amplifier Applications |
| 2SC536NF-NPA-AT | 功能描述:兩極晶體管 - BJT BIP NPN 0.15A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC536NG-NPA-AT | 功能描述:兩極晶體管 - BJT BIP NPN 0.15A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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