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| 型號(hào)： | 2SC536SPA |
| 英文描述： | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | SPAK |
| 中文描述： | 晶體管|晶體管|叩| 30V的五（巴西）總裁| 100mA的一（c）| SPAK |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | 2SC536SPA |
61598TS (KOTO) TA-1238 No.5883-1/3
2SC5304
Ordering number:EN5883
Inverter Lighting Applications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Triple Diffused Planar Silicon Transistor
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Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2079B
[2SC5304]
Features
High breakdown voltage (VCBO=1000V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
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Tc=25C
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Electrical Characteristics at Ta=25C
SANYO:TO-220FI (LS)
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1:Base
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3:Emitter
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