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參數(shù)資料
| 型號： | 2SC5436-T1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 69K |
| 代理商： | 2SC5436-T1 |
Data Sheet PU10104EJ01V0DS
2
2SC5436
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
–
100
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
–
100
nA
DC Current Gain
hFE
Note 1
VCE = 2 V, IC = 20 mA
70
–
130
–
Gain Bandwidth Product (1)
fT
VCE = 2 V, IC = 20 mA, f = 2 GHz
9.0
14.0
–
GHz
Gain Bandwidth Product (2)
fT
VCE = 1 V, IC = 10 mA, f = 2 GHz
7.0
12.0
–
GHz
Insertion Power Gain (1)
S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz
8.5
10.0
–
dB
Insertion Power Gain (2)
S21e2 VCE = 1 V, IC = 10 mA, f = 2 GHz
6.0
9.0
–
dB
Noise Figure (1)
NF
VCE = 2 V, IC = 3 mA, f = 2 GHz
–
1.4
2.0
dB
Noise Figure (2)
NF
VCE = 1 V, IC = 3 mA, f = 2 GHz
–
1.4
2.0
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
–
0.4
0.8
pF
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
EB
FB
Marking
TN
TP
hFE Value
70 to 100
90 to 130
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| 2SC5437-T1EB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5439(F) | 功能描述:兩極晶體管 - BJT NPN 450V 8A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5443 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR TO-3 1500V 20A 3.5W |
| 2SC5445 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5445(F) | 制造商:Toshiba 功能描述:NPN Cut Tape |
| 2SC5446(F) | 制造商:Toshiba America Electronic Components 功能描述: |
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