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參數(shù)資料
| 型號(hào)： | 2SC5509-T2FB-A |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPER MINIMOLD, M04, 4 PIN |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | 2SC5509-T2FB-A |
Data Sheet PU10009EJ02V0DS
2
2SC5509
THERMAL RESISTANCE
Parameter
Symbol
Ratings
Unit
Junction to Case Resistance
Rth j-c
95
°C/W
Junction to Ambient Resistance
Rth j-a
650
°C/W
ELECTRICAL CHARACTERISTICS (TA = +25
°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
600
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
600
nA
DC Current Gain
hFE
Note 1
VCE = 2 V, IC = 10 mA
50
70
100
RF Characteristics
Gain Bandwidth Product
fT
VCE = 3 V, IC = 90 mA, f = 2 GHz
13
15
GHz
Insertion Power Gain
S21e2
VCE = 2 V, IC = 50 mA, f = 2 GHz
8
11
dB
Noise Figure
NF
VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt
–
1.2
1.7
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
0.5
0.75
pF
Maximum Available Power Gain
MAG
Note 3
VCE = 2 V, IC = 50 mA, f = 2 GHz
14
dB
Maximum Stable Power Gain
MSG
Note 4
VCE = 2 V, IC = 50 mA, f = 2 GHz
15
dB
Gain 1 dB Compression Output Power
PO (1 dB)
VCE = 2 V, IC = 70 mA
Note 5, f = 2 GHz
17
dBm
3rd Order Intermodulation Distortion
Output Intercept Point
OIP3
VCE = 2 V, IC = 70 mA
Note 5, f = 2 GHz
27
dBm
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
4. MSG =
5. Collector current when PO (1 dB) is output
hFE CLASSIFICATION
Rank
FB
Marking
T80
hFE Value
50 to 100
(K –
√ (K2 – 1) )
S21
S12
S21
S12
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