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參數(shù)資料
| 型號： | 2SC5511E |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220FN, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2SC5511E |
2SC5511
Transistors
High-voltage Switching
(Audio output amplifier transistor,
TV velocity modulation transistor)
(160V, 1.5A)
2SC5511
!
!Features
1) Flat DC current gain characteristics.
2) High breakdown voltage. (BVCEO = 160V)
3) High fT. (Typ. 150MHz)
4) Wide SOA (safe operating area).
5) Complements the 2SA2005.
!
!Absolute maximum ratings
(Ta = 25
°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
160
5
1.5
2
20
150
55~+150
Unit
V
A
W
W (Tc = 25
°C)
°C
!
!External dimensions
(Units : mm)
ROHM : TO-220FN
(2) Collector(Drain)
(3) Emitter(Source)
(1) Base(Gate)
0.75
0.8
2.54
(1)
(3)
(2)
(1)
2.54
(3)
(2)
5.0
8.0
14.0
15.0
12.0
1.3
1.2
10.0
3.2
φ
2.6
4.5
2.8
!
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit
2SC5511
TO-220FN
DE
-
500
!
!Electrical characteristics
(Ta = 25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
160
5
60
150
35
1
200
V
A
V
MHz
pF
IC = 50
A
IC = 1mA
IE = 50
A
VCB = 160V
VEB = 4V
IC/IB = 1A/0.1A
VCE = 5V , IC = 0.1A
VCE = 10V , IE = 0.2A , f = 100MHz
VCB = 10V , IE = 0A , f = 1MHz
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| 2SC5543 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5517000LK | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5521 | 制造商:JVC Worldwide 功能描述:TRANSISTOR |
| 2SC5536A-TL-H | 功能描述:兩極晶體管 - BJT BIP NPN 50MA 12V FT=1.7G RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5548(Q) | 制造商:Toshiba 功能描述:NPN 370V 2A 50 to 120 PW-Mold |
| 2SC5548A(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 400V 2A 3-Pin(2+Tab) PW-Mold |
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