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參數(shù)資料
| 型號： | 2SC5516 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion mesa type(For horizontal deflection output) |
| 中文描述： | 20 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TOP3E, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SC5516 |
1
Power Transistors
2SC5516
Silicon NPN triple diffusion mesa type
For horizontal deflection output
I
Features
G
High breakdown voltage, and high reliability through the use of a
glass passivation layer
G
High-speed switching
G
Wide area of safe operation (ASO)
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
1500
1500
600
5
30
20
8
70
3.5
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
C
C
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1500V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 10A
I
C
= 10A, I
B
= 2.5A
I
C
= 10A, I
B
= 2.5A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 10A, I
B1
= 2.5A, I
B2
= –5.0A
min
5
typ
3
max
50
1
50
10
3
1.5
2.7
0.2
Unit
μ
A
mA
μ
A
V
V
MHz
μ
s
μ
s
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
15.5
±
0.5
2
±
0
2
±
0
2
1
±
0
3
±
0
5
±
0
2
0
±
0
2
2
1
3.0
±
0.3
φ
3.2
±
0.1
4
5.45
±
0.3
1
2
3
5.45
±
0.3
1.1
±
0.1
2.0
±
0.2
4.0
5
°
5
°
5
°
5
°
5
°
5
°
0.7
±
0.1
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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