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參數(shù)資料
| 型號(hào)： | 2SC5531 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | High-Voltage Switching Transistor(高電壓開關(guān)晶體管) |
| 中文描述： | 高壓開關(guān)晶體管（高電壓開關(guān)晶體管） |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2SC5531 |
2SC5531
Transistors
High-Voltage Switching Transistor
(400V, 2A)
2SC5531
!
Features
1) Low V
CE(sat)
.
V
CE(sat)
=0.15V (Typ.)
(I
C
/ I
B
=1A / 0.2A)
2) High breakdown voltage.
V
CEO
=400V
3) Fast switching.
tf
≤
1.0
μ
s
(I
C
=0.8A)
!
Structure
Three-layer, diffused planar type NPN silicon transistor.
!
External dimensions
(Units : mm)
ROHM : PSD3
EIAJ : SC-83A
1
0
0.5Min.
0
1
4
0
(1) Base
(2) Collector
(3) Emitter
1
8.8
(
(
2
(
5
3.2
13.1
1
!
Absolute maximum ratings
(Ta=25
°
C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Single pulse Pw=10ms
Parameter
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
400
V
V
V
A(DC)
W
W( Tc=25C)
C
C
400
7
2
I
CP
A(Pulse)
4
2
30
*
150
-55~+150
Symbol
Limits
Unit
!
Electrical characteristics
(Ta=25
°
C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Turn-on time
Storage time
Fall time
*
1 Measured using pulse current
Emitter-base breakdown voltage
Base-emitter saturation voltage
Transition frequency
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
400
400
7
-
-
25
-
-
-
-
-
-
-
-
-
-
10
30
-
-
-
10
10
50
1
-
*
1
-
V
I
C
=50
μ
A
I
C
=1mA
I
E
=50
μ
A
V
CB
=400V
V
EB
=7V
V
CE
=5V, I
C
=0.1A
I
C
/I
B
=1A/0.2A
V
CE
=10V,I
E
=-0.5A,f=5MHz
V
CB
=10V, I
E
=0A, f=1MHz
V
V
μ
A
μ
A
-
V
MHz
pF
t
ON
-
-
1
I
C
=0.8A, R
L
=250
I
B1
=-I
B2
=0.08A
V
CC
200V
Refer to measurement circuit diagram
μ
s
tstg
-
-
2.5
μ
s
tf
-
-
1
μ
s
Typ.
Max.
Unit
Conditions
V
BE(sat)
-
-
1.5
I
C
/I
B
=1A/0.2A
V
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SC5531
PSD3
B
-
500
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