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參數(shù)資料
| 型號： | 2SC5574G |
| 英文描述： | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 中文描述： | 晶體管|晶體管|叩| 80V的五（巴西）總裁| 4A條一（c）|至220FN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 2SC5574G |
2SC5585 / 2SC5663
Transistors
Low frequency transistor (50V, 2A)
2SC5585 / 2SC5663
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
!
Applications
For switching
For muting
!
Features
1) High current.
2) Low VCE(sat).
VCE(sat)
≤ 250mV at IC = 200mA / IB = 10mA
!
External dimensions (Units : mm)
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
2SC5585
Abbreviated symbol : BX
ROHM : VMT3
2SC5663
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
(2) Base
(3) Collector
0.7
0.15
0.1Min.
0.55
0~0.1
0.2
1.6
1.0
0.3
0.8
(2)
0.5
(3)
0.2
(1)
0~0.1
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.4
1.2
0.8
0.2
0.15Max.
0.2
(2)
(1)
!
Absolute maximum ratings (Ta=25
°C)
Parameter
Collectot-base voltage
Collector-emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PC
Tj
Tstg
15
V
mA
mW
°C
12
500
ICP
A
1
150
55~+150
Symbol
Limits
Unit
Single pulse Pw = 1ms
!
Electrical characteristics (Ta=25
°C)
Parameter
Collector-base breakdown voltage
Collectoe-emitter brakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE(sat)
Cob
Min.
15
12
6
270
90
7.5
100
680
250
VIC = 10
A
IC = 1mA
IE = 10
A
VCB = 15V
VCE = 2V, IC = 10mA
IC/IB = 200mA/10mA
VCB = 10V, IE = 0A, f = 1MHz
V
nA
mV
fT
320
VCE = 2V, IE =
10mA, f = 100MHz
MHz
pF
Typ.
Max.
Unit
Conditions
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC5575 | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7A I(C) | TO-220FN |
| 2SC5575E | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SC5576 | |
| 2SC5585H | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SC5585TL | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 500MA I(C) | SOT-416 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5584 | 制造商:Distributed By MCM 功能描述:1500V 20A 150W Bce Matsushita Transistor Top-3L |
| 2SC5585TL | 功能描述:兩極晶體管 - BJT NPN 12V 0.5A SOT-416 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5587(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5588 | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 800V 15A 3-Pin(3+Tab) TO-3P(HIS) 制造商:Distributed By MCM 功能描述:1700V 15A 75W Bce Toshiba Transistor 2-16E3A |
| 2SC5588(Q,M) | 功能描述:兩極晶體管 - BJT Transistor NPN 1700V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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