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參數(shù)資料
| 型號： | 2SC5606-T1FB-A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 67K |
| 代理商： | 2SC5606-T1FB-A |
Data Sheet P14658EJ3V0DS
2
2SC5606
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
–
200
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
–
200
nA
DC Current Gain
hFE
Note 1
VCE = 2 V, IC = 5 mA
60
80
100
–
RF Characteristics
Gain Bandwidth Product
fT
VCE = 2 V, IC = 20 mA, f = 2 GHz
–
21
–
GHz
Insertion Power Gain
S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz
10
12.5
–
dB
Noise Figure
NF
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
–1.2
1.5
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
–
0.21
0.3
pF
Maximum Available Power Gain
MAG
Note 3
VCE = 2 V, IC = 20 mA, f = 2 GHz
–
14
–
dB
Maximum Stable Power Gain
MSG
Note 4
VCE = 2 V, IC = 20 mA, f = 2 GHz
–
15
–
dB
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
4. MSG =
hFE CLASSIFICATION
Rank
FB
Marking
UA
hFE
60 to 100
(K –
√√√√ (K2 – 1) )
S21
S12
S21
S12
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|---|---|
| 2SC5611 | 制造商:Sony Semiconductor Solutions Division 功能描述: |
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| 2SC5612LB228 | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTORSUBBING WITH B1BAJW000001 |
| 2SC562 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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