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參數(shù)資料
| 型號(hào)： | 2SC5607 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 5000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SPA, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 61K |
| 代理商： | 2SC5607 |
2SC5607
No.6403-2/4
+
50Ω
INPUT
OUTPUT
VR
RB
RL
VCC=5V
220μF
470μF
VBE= --5V
PW=20μs
D.C.≤1%
IB1
IB2
20IB1= --20IB2= IC=1.5A
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=10V, IE=0
0.1
μA
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
0.1
μA
DC Current Gain
hFE1VCE=2V, IC=500mA
600
hFE2VCE=2V, IC=3A
200
Gain-Bandwidth Product
fT
VCE=2V, IC=500mA
380
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
23
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)1
IC=1.5A, IB=30mA
100
150
mV
VCE(sat)2
IC=3A, IB=60mA
180
270
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=1.5A, IB=30mA
0.85
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10μA, IE=0
15
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
10
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10μA, IC=0
7
V
Turn-On Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
210
ns
Fall Time
tf
See specified Test Circuit.
11
ns
Switching Time Test Circuit
3
2
1
5
4
0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
1.5
1.0
0.5
2.0
0
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
10
3
2
1
5
4
0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
1.0
0.1
0.01
23
5 7
23
5
7
2
3
5 7
1.0
10
0
12
4
3
5
VCE=2V
IT01588
IT01589
IT01590
IT01591
IB=0
1mA
10mA
15mA
20mA
40m
A
3mA
5mA
1mA
2mA
10mA
15mA
20m
A
25mA
4mA
6mA
8mA
T
a=75
°C
25
°C
--25
°C
Ta=75°C
25°C
--25
°C
4mA
2mA
25mA
60mA
IC -- VCE
hFE -- IC
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
Collecotr
Current,
I
C
-
A
Collector-to-Emitter Voltage, VCE -- V
Collecotr
Current,
I
C
-
A
Base-to-Emitter Voltage, VBE -- V
Collector
Current,
I
C
-
A
Collector Current, IC -- A
DC
Current
Gain,
h
FE
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