參數(shù)資料
型號(hào): 2SC5615
元件分類: 小信號(hào)晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: LEADLESS MINIMOLD PACKAGE-3
文件頁數(shù): 1/32頁
文件大小: 127K
代理商: 2SC5615
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15572EJ1V0DS00 (1st edition)
Date Published June 2001 NS CP(K)
Printed in Japan
2001
NPN SILICON RF TRANSISTOR
2SC5615
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN LEAD-LESS MINIMOLD
FEATURES
1005 package employed (1.0
× 0.5 × 0.5 mm)
NF = 1.4 dB TYP.,
S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5615
50 pcs (Non reel)
8 mm wide embossed taping
2SC5615-T3
10 kpcs/reel
Pin 2 (Base) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
65
mA
Total Power Dissipation
Ptot
Note
140
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy substrate
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
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