參數(shù)資料
型號: 2SC5886
元件分類: 小信號晶體管
英文描述: 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: LEAD FREE, 2-7J1A, 3 PIN
文件頁數(shù): 1/5頁
文件大小: 141K
代理商: 2SC5886
2SC5886
2006-11-10
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5886
High-Speed Swtching Applications
DC-DC Converter Applications
High DC current gain: hFE = 400 to 1000 (IC = 0.5 A)
Low collector-emitter saturation: VCE (sat) = 0.22 V (max)
High-speed switching: tf = 55 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
VCEX
80
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
DC
IC
5
Collector current
Pulse
ICP
10
A
Base current
IB
0.5
A
Ta
= 25°C
1
Collector power
dissipation
Tc
= 25°C
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
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