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參數(shù)資料
| 型號(hào)： | 2SC5900 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3PMLH, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 29K |
| 代理商： | 2SC5900 |
2SC5900
No.7539-1/4
Features
High speed.
High breakdown voltage(VCBO=1700V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
Built in damper diode.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
1700
V
Collector-to-Emitter Voltage
VCEO
800
V
Emitter-to-Base Voltage
VEBO
5V
Collector Current
IC
8A
Collector Current (Pulse)
ICP
16
A
Collector Dissipation
PC
3.0
W
Tc=25
°C80
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=800V, IE=0
10
A
ICES
VCE=1700V, RBE=0
1.0
mA
Collector Sustain Voltage
VCEO(sus)
IC=100mA, IB=0
800
V
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
40
130
mA
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7539
2SC5900
CRT Display Horizontal Deflection
Output Applications
Package Dimensions
unit : mm
2174A
[2SC5900]
31504KD TS IM TA-100535
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
21.0
5.0
22.0
0.8
20.4
4.0
16.0
3.4
2.0
2.8
2.1
5.45
0.7
0.9
3.5
8.0
5.6
3.1
12
3
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