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參數(shù)資料
| 型號： | 2SC5993Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.5 A, 180 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220D-A1, FULL PACK-3 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 224K |
| 代理商： | 2SC5993Q |
2SC5011
3
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
-
Total
Power
Dissipation
-
mW
TA - Ambient Temperature - C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
IC
-
Collector
Current
-
mA
50
VBE - Base to Emitter Voltage - V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
IC
-
Collector
Current
-
mA
30
VCE - Collector to Emitter Voltage - V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
h
FE
-
DC
Current
Gain
IC - Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
fT
-
Gain
Bandwidth
Product
-
GHz
IC - Collector Current - mA
INSERTION GAIN vs.
COLLECTOR CURRENT
|S
21e
|2
-
Insertion
Gain
-
dB
1
IC - Collector Current - mA
200
100
50
100
150
0
0.5
1.0
0
40
30
20
10
VCE = 10 V
20
10
5
10
15
0
500
200
1
100
10
20
50
5
10
50
100
VCE = 10 V
10
1
0
5
10
50
100
VCE = 10 V
f = 1 GHz
20
0
10
5
10
50
100
VCE = 10 V
f = 1 GHz
A
180
A
160
A
140
A
120
A
100
A
80
A
40
A
20
A
IB =
200
60
A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5994-TD-E | 功能描述:兩極晶體管 - BJT BIP NPN 2A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5998YC-TL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC6000 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications DC-DC Converter Applications |
| 2SC6000(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 50V 7A hfe250-400 13ns |
| 2SC6010 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type |
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