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參數(shù)資料
| 型號(hào)： | 2SC6075 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2.5 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, 2-8M1A, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 168K |
| 代理商： | 2SC6075 |
2SC6075
2007-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6075
Power Amplifier Applications
Power Switching Applications
Low collector emitter saturation voltage
: VCE (sat) = 0.5 V (max)（IC = 1A）
High-speed switching: tstg = 0.4 μs (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
160
V
VCEX
160
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
9
V
DC
IC
2.5
A
Collector current
Pulse
ICP
5.0
A
Base current
IB
1.0
A
Collector power dissipation
PC
1.3
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55～150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight:0.55g(typ)
1 : EMITTER
2 : COLLECTOR
3 : BASE
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| 2SC6080 | 13 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC6092LS | 8 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC6076 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process) |
| 2SC6076(TE16L1,NQ) | 制造商:Toshiba 功能描述:Cut Tape 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 80V 3A hfe180-450 0.4us |
| 2SC6076(TE16L1,NV) | 功能描述:TRANS NPN 80V 3A PW MOLD 制造商:toshiba semiconductor and storage 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:3A 電壓 - 集射極擊穿（最大值）:80V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:500mV @ 100mA，1A 電流 - 集電極截止（最大值）:1μA（ICBO） 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:180 @ 500mA，2V 功率 - 最大值:10W 頻率 - 躍遷:150MHz 安裝類型:表面貼裝 封裝/外殼:TO-252-3，DPak（2 引線+接片），SC-63 供應(yīng)商器件封裝:PW-MOLD 標(biāo)準(zhǔn)包裝:1 |
| 2SC6077 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process) |
| 2SC6078 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process) |
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