參數(shù)資料
型號: 2SD0602A
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon NPN epitaxial planer type
中文描述: 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
封裝: ROHS COMPLIANT, MINI3-G1, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 60K
代理商: 2SD0602A
Transistors
2SD0602A
Silicon NPN epitaxial planer type
1
For general amplification
Complementary to 2SB0710A
I
Features
Low collector to emitter saturation voltage V
CE(sat)
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
V
EBO
I
CP
50
V
Emitter to base voltage
5
V
Peak collector current
1
A
Collector current
I
C
P
C
T
j
500
mA
Collector power dissipation
200
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
I
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Marking Symbol: X
Note)*1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
No-rank
h
FE1
85 to 170
120 to 240
170 to 340
85 to 340
Marking symbol
XQ
XR
XS
X
Unit: mm
0.40
+0.10
(
1
+
2
+
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
0.16
+0.10
0
±
5
°
10
°
0
1
+
1
+
1: Base
2: Emitter
3: Collector
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package
Product of no-rank is not classified and have no indication for rank.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CBO
V
CB
=
20 V, I
E
=
0
I
C
=
10
μ
A, I
E
=
0
I
C
=
10 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CE
=
10 V, I
C
=
150 mA
V
CE
=
10 V, I
C
=
500 mA
I
C
=
300 mA, I
B
=
30 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
0.1
μ
A
Collector to base voltage
60
V
Collector to emitter voltage
V
CEO
V
EBO
h
FE1
*2
50
V
Emitter to base voltage
Forward current transfer ratio
*1
5
V
85
340
h
FE2
V
CE(sat)
f
T
40
Collector to emitter saturation voltage
*1
0.35
0.6
V
Transition frequency
200
MHz
Collector output capacitance
C
ob
6
15
pF
相關(guān)PDF資料
PDF描述
2SD0638 For Medium-Power General Amplification
2SD0662 For High Breakdown Voltage General Amplification
2SD0662B For High Breakdown Voltage General Amplification
2SD0814A For High Breakdown Voltage Low-Frequency And Low-Noise
2SD0814 0.01UF +/-10% 80V AXI
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD0602A(2SD602A) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:小信號デバイス - 小信號トランジスタ - 汎用低周波増幅
2SD0602A_13 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type
2SD0602A0L 功能描述:TRANS NPN GP AMP 50VCEO MINI 3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SD0602AQ 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | TO-236AB