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參數(shù)資料
| 型號： | 2SD0965 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planar type |
| 中文描述： | 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, TO-92-B1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 88K |
| 代理商： | 2SD0965 |
Transistors
2SD0965
(2SD965)
Silicon NPN epitaxial planar type
1
Publication date: January 2003
SJC00200BED
For low-frequency power amplification
For stroboscope
■
Features
Low collector-emitter saturation voltage V
CE(sat)
Satisfactory operation performances at high efficiency with the low-
voltage power supply.
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
40
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
I
C
7
V
Collector current
5
A
Peak collector current
I
CP
8
A
Collector power dissipation
P
C
T
j
750
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
=
1 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
10 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
EB
=
7 V, I
C
=
0
20
V
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
0.1
μ
A
μ
A
μ
A
Collector-emitter cutoff current (Base open)
1
Emitter-base cutoff current (Collector open)
I
EBO
h
FE1
*
h
FE2
0.1
Forward current transfer ratio
V
CE
= 2 V, I
C
= 0.5 A
V
CE
= 2 V, I
C
= 1 A
I
C
=
3 A, I
B
=
0.1 A
V
CB
=
6 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
20 V, I
E
=
0, f
=
1 MHz
230
600
150
Collector-emitter saturation voltage
V
CE(sat)
0.28
1.00
V
Transition frequency
f
T
C
ob
150
MHz
Collector output capacitance
(Common base, input open circuited)
26
50
pF
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
5.0
±
0.2
0.7
±
0.1
0.45
+0.15
2.5
+0.6
0.45
+0.15
2.5
1
2 3
+0.6
4.0
±
0.2
5
±
0
1
±
0
2
±
0
0
±
0
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Rank
Q
R
h
FE1
230 to 380
340 to 600
Note) The part number in the parenthesis shows conventional part number.
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PDF描述 |
|---|---|
| 2SD0966 | For Low-Frequency Amplification |
| 2SD966 | For Low-Frequency Amplification |
| 2SD0968A | For Low-Frequency Driver Amplification |
| 2SD0973A | For Low-Frequency Driver Amplification |
| 2SD1009 | 2SD1009 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD0965(2SD965) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SD09650RA | 功能描述:TRANS NPN 20VCEO 5A TO-92 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD0965Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-92 |
| 2SD0965R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-92 |
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