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參數(shù)資料
| 型號(hào)： | 2SD1051 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For low-frequency power amplification) |
| 中文描述： | 1500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 40K |
| 代理商： | 2SD1051 |
1
Transistor
2SD1051
Silicon NPN epitaxial planer type
For low-frequency power amplification
Complementary to 2SB819
I
Features
G
High collector to emitter voltage V
CEO
.
G
Large collector power dissipation P
C
.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1
±
0
1
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R07
0
0.85
3
±
0
2
±
0
2
±
0
1
±
0
4
±
0
4
±
0
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
50
40
5
3
1.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
V
CBO
V
CEO
h
FE*1
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
EB
= 5V, I
E
= 0
I
C
= 1mA, I
E
= 0
I
C
= 2mA, I
B
= 0
V
CE
= 5V, I
C
= 1A
*2
I
C
= 1.5A, I
B
= 0.15A
*2
I
C
= 2A, I
B
= 0.2A
*2
V
CB
= 5V, I
E
= –0.5A
*2
, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
min
50
40
80
typ
120
150
45
max
1
100
10
220
1
1.5
Unit
μ
A
μ
A
μ
A
V
V
V
V
MHz
pF
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*1
h
FE
Rank classification
Rank
Q
R
h
FE
80 ~ 160
120 ~ 220
*2
Pulse measurement
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1051Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 1.5A I(C) | SC-71 |
| 2SD1051R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 1.5A I(C) | SC-71 |
| 2SD1052 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTORTO-220-AB 50V 3A 30W BCE 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1052A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB 50V 3A 1.5W BCE |
| 2SD1054 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 300V 3A 80W BEC |
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