參數(shù)資料
型號(hào): 2SD1061S
元件分類: 功率晶體管
英文描述: 7 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁(yè)數(shù): 3/4頁(yè)
文件大小: 40K
代理商: 2SD1061S
2SB825/2SD1061
No.687–3/4
A S O
--1.0
5
7
2
3
5
7
2
3
--10
2
--0.1
--10
--1.0
25
3
57
7
2
5
37 --100
ICP=–12A
10ms
10m
s
100ms
DC
operation
100ms
1ms
IC=–7A
ITR08458
1.0
5
7
2
3
5
7
2
3
10
2
0.1
10
1.0
25
3
57
7
2
5
37
100
DC
operation
2SB825
ICP=12A
1ms
IC=7A
ITR08459
2SD1061
A S O
VCE(sat) -- IC
2SD1061
VCE=2V
--10
--0.1
35
7
3
5
7
2
23
5
7
2
--1.0
5
3
2
--1.0
5
7
3
2
5
7
3
2
--0.1
10
0.1
0.01
23
5 7
23
5 7
23
5 7
2
1.0
5
3
2
5
3
2
1.0
7
5
3
2
7
0.1
0.01
VCE(sat) -- IC
ITR08456
ITR08457
2SB825
I C
/ I B
=10
I C
/ I B
=20
I C
/ I B
=10
I C
/ I B
=20
hFE -- IC
2SB825
VCE= --2V
ITR08454
100
7
5
3
2
7
5
3
2
5
3
2
10
100
7
5
3
2
7
5
3
2
5
3
2
10
35
0.1
3
25
1.0
2
10
--1.0
3
27
53
27
53
27
7
3
25
7
5
--10
2
--0.1
hFE -- IC
2SD1061
VCE=2V
ITR08455
0
50
40
30
20
10
20
060
40
80
100
140
120
160
PC -- Ta
ITR08460
Ideal
radiation
DC
Current
Gain,
h
FE
Collector Current, IC –A
DC
Current
Gain,
h
FE
Collector Current, IC –A
Collector-to-Emitter
Saturation
Voltage,
V
CE
(sat)
V
Collector Current, IC –A
Collector-to-Emitter
Saturation
Voltage,
V
CE
(sat)
V
(Single pulse with regard to 1ms to 100ms)
Collector-to-Emitter Voltage, VCE –V
Collector
Current,
I C
–A
Collector-to-Emitter Voltage, VCE –V
Collector
Current,
I C
–A
Collector
Dissipation,
P
C
–W
Ambient Temperature, Ta – C
相關(guān)PDF資料
PDF描述
2SB825S 7 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB825-S 7 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB825-Q 7 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SD1061-Q 7 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SB834O 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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