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參數(shù)資料
| 型號： | 2SD1101 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 24K |
| 代理商： | 2SD1101 |
2SD1101
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
P
C
Tj
25
V
Collector to emitter voltage
20
V
Emitter to base voltage
5
V
Collector current
0.7
A
Collector peak current
1
A
Collector power dissipation
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
25
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
5
—
—
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
h
FE
*
1
V
CE(sat)
—
—
1.0
μ
A
V
CB
= 20 V, I
E
= 0
V
CE
= 1 V, I
C
= 0.15 A*
2
I
C
= 0.5 A, I
B
= 0.05 A*
2
DC current transfer ratio
85
—
240
Collector to emitter saturation
voltage
—
—
0.5
V
Base to emitter voltage
Notes: 1. The 2SD1101 is grouped by h
FE
as follows.
2. Pulse test
Grade
B
V
BE
—
—
1.0
V
V
CE
= 1 V, I
C
= 0.15 A*
2
C
Mark
AB
AC
h
FE
85 to 170
120 to 240
See characteristic curves of 2SD467.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1111 | Driver Applications |
| 2SD1113 | Silicon NPN Triple Diffused |
| 2SD1113K | Silicon NPN Triple Diffused |
| 2SD1126 | Silicon NPN Triple Diffused(三倍擴散NPN晶體管) |
| 2SD1126K | Silicon NPN Triple Diffused(三倍擴散NPN晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1101ACTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SD1101B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 700MA I(C) | TO-236VAR |
| 2SD1101C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 700MA I(C) | TO-236VAR |
| 2SD1105 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1109 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR MP-80120V 6A 70W BCE |
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