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參數(shù)資料
| 型號(hào)： | 2SD1135C |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 165K |
| 代理商： | 2SD1135C |
2SD1135
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
80
—
V
I
C = 50 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5—
—
VI
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
0.1
mA
V
CB = 80 V, IE = 0
DC current transfer ratio
h
FE1*
1
60
—
200
V
CE = 5 V, IC = 1 A*
2
h
FE2
35
—
V
CE = 5 V, IC = 0.1 A*
2
Base to emitter voltage
V
BE
—
1.5
V
CE = 5 V, IC = 1 A*
2
Collector to emitter saturation
voltage
V
CE(sat)
—
2VI
C = 2 A, IB = 0.2 A*
2
Gain bandwidth product
f
T
—
10
—
MHz
V
CE = 5 V, IC = 0.5 A*
2
Collector output capacitance
Cob
—
40
—
pF
V
CB = 20 V, IE = 0, f = 1 MHz
Notes: 1. The 2SD1135 is grouped by h
FE1 as follows.
2. Pulse test.
BC
60 to 120
100 to 200
0
50
100
150
Case temperature TC (°C)
Collector
power
dissipation
Pc
(W)
Maximum Collector Dissipation Curve
20
40
60
0.05
0.1
0.2
0.5
1.0
2
5
Collector to emitter voltage VCE (V)
Collector
current
I
C
(A)
1
2
5
10
20
50
100
Area of Safe Operation
IC max (Continuous)
(10 V, 4 A)
(33 V, 1.2 A)
(80 V, 0.06 A)
DC
Operation
(T
C =
25
°C)
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| 2SD1198AR | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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| 2SD1200FR | 700 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1189T100/Q | 0.7 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2SB1189T100R | 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1136 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Bipolar Transistors |
| 2SD1137 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Bipolar Transistors |
| 2SD1137(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1138 | 制造商:MISCELLANEOUS 功能描述: |
| 2SD1138B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-220AB |
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