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參數(shù)資料
| 型號(hào)： | 2SD1205 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type darlington(For low-frequency amplification) |
| 中文描述： | 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2SD1205 |
1
Transistor
2SD1205, 2SD1205A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
I
Features
G
Forward current transfer ratio h
FE
is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: h
FE
= 4000 to 2000.
G
A shunt resistor is omitted from the driver.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1
±
0
1
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R07
0
0.85
3
±
0
2
±
0
2
±
0
1
±
0
4
±
0
4
±
0
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
30
60
25
50
5
750
500
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
2SD1205
2SD1205A
2SD1205
2SD1205A
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 500mA
*2
I
C
= 500mA, I
B
= 0.5mA
*2
I
C
= 500mA, I
B
= 0.5mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
min
30
60
25
50
5
4000
typ
150
max
100
100
20000
2.5
3
Unit
nA
nA
V
V
V
V
V
MHz
Internal Connection
B
C
E
≈
200
*1
h
FE
Rank classification
Rank
Q
R
h
FE
4000 ~ 10000 8000 ~ 20000
*2
Pulse measurement
2SD1205
2SD1205A
2SD1205
2SD1205A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1205A | Silicon NPN epitaxial planer type darlington(For low-frequency amplification) |
| 2SD1210 | NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR |
| 2SD1211 | Silicon NPN epitaxial planer type(For low-frequency amplification) |
| 2SD1216 | SI NPN PLANAR DARLINGTON |
| 2SD1217 | SI NPN PLANAR DARLINGTON |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1205/2SD1205A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SD1205. 2SD1205A - NPN Transistor darlington |
| 2SD1205A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type darlington(For low-frequency amplification) |
| 2SD1205AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 500MA I(C) | SIP |
| 2SD1205AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 500MA I(C) | SIP |
| 2SD1205Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 25V V(BR)CEO | 500MA I(C) | SIP |
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