參數(shù)資料
型號(hào): 2SD1221-GR(2-7J1A)
元件分類: 小信號(hào)晶體管
英文描述: 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: 2-7J1A, 3 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 107K
代理商: 2SD1221-GR(2-7J1A)
2SD1221
2002-07-23
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 60 V, IE = 0
100
A
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
100
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
60
V
hFE (1)
(Note)
VCE = 5 V, IC = 0.5 A
60
300
DC current gain
hFE (2)
VCE = 5 V, IC = 3 A
20
Collector-emitter saturation voltage
VCE (sat)
IC = 3 A, IB = 0.3 A
0.4
1.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 0.5 A
0.7
1.0
V
Transition frequency
fT
VCE = 5 V, IC = 0.5 A
3.0
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
70
pF
Turn-on time
ton
0.8
Storage time
tstg
1.5
Switching time
Fall time
tf
IB1 = IB2 = 0.2 A, DUTY CYCLE ≤ 1%
0.8
s
Note: hFE classification O: 60 to 120, Y: 100 to 200, GR: 150 to 300
Marking
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture
20 s
INPUT
IB1
IB2
OUTPUT
VCC = 30 V
I B1
15
IB2
D1221
Product No.
Lot No.
hFE Classification
相關(guān)PDF資料
PDF描述
2SD1221Y(2-7J1A) 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1221GR(2-7B1A) 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1221GR(2-7J1A) 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1221O(2-7J1A) 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1247R 2500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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參數(shù)描述
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2SD1221Y 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-251
2SD1221-Y(Q) 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 60V 3A PW MOLD
2SD1221-Y(T6L1,NQ) 制造商:Toshiba 功能描述:NPN