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參數(shù)資料
| 型號(hào)： | 2SD1251O |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | N TYPE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 170K |
| 代理商： | 2SD1251O |
2
Power Transistors
2SD1251, 2SD1251A
PC —Ta
IC —VCE
IC —VBE
VCE(sat) —IC
hFE —IC
Cob —VCB
Area of safe operation (ASO)
Rth(t) —t
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
C=Ta
(2) With a 50
× 50 × 2mm
Al heat sink
(3) Without heat sink
(P
C=1.3W)
(1)
(2)
(3)
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(W
)
012
10
8
26
4
0
2.4
2.0
1..6
1.2
0.8
0.4
I
B=35mA
30mA
25mA
20mA
15mA
10mA
5mA
T
C=25C
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
02.4
2.0
1.6
0.4
1.2
0.8
0
3.2
2.4
0.8
2.0
2.8
1.6
0.4
1.2
T
C=100C
25C
–25C
V
CE=3V
Base to emitter voltage V
BE
(V)
Collector
current
I
C
(A
)
0.01
0.03
0.1
0.3
1
3
0.01
0.03
0.1
0.3
1
3
10
30
I
C/IB=5
T
C=25C
T
C=100C
25C
–25C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE=3V
T
C=100C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
E=0
f=1MHz
T
C=25C
Collector to base voltage V
CB
(V)
Collector
output
capacitance
C
ob
(pF
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
I
CP
I
C
10ms
300ms
t=5ms
2SD1251
2SD1251A
Non repetitive pulse
T
C=25C
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
10–4
10
10–3
10–1
10–2
1103
102
104
10–2
10–1
1
10
103
102
(1) Without heat sink
(2) With a 50
× 50 × 2mm Al heat sink
(1)
(2)
Time t (s)
Thermal
resistance
R
th
(t)
(C/W
)
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| 2SD1251AO | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD1255P | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD1255R | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD1257P | 7 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD1257Q | 7 A, 80 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1251P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SD1251Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SD1252 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type(For power amplification) |
| 2SD1252/2SD1252A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SD1252. 2SD1252A - NPN Transistor |
| 2SD1252A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type(For power amplification) |
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