參數(shù)資料
型號(hào): 2SD1252A
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon PNP epitaxial planar type(For power amplification)
中文描述: 3 A, 80 V, NPN, Si, POWER TRANSISTOR
封裝: N-G1, 3 PIN
文件頁數(shù): 2/2頁
文件大小: 50K
代理商: 2SD1252A
2
Power Transistors
2SB929, 2SB929A
P
C
— Ta
I
C
— V
CE
I
C
— V
BE
V
CE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
Area of safe operation (ASO)
R
th(t)
— t
0
160
40
120
80
140
20
100
60
0
40
30
10
25
35
20
5
15
(1) T
=Ta
(2) With a 50
×
50
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
(1)
(2)
(3)
Ambient temperature Ta (C)
C
C
0
–12
–10
–8
–2
–6
–4
0
–6
–5
–4
–3
–2
–1
T
C
=25C
–80mA
–60mA
–40mA
–30mA
–20mA
–12mA
–8mA
–4mA
–16mA
I
B
=–100mA
Collector to emitter voltage V
CE
(V)
C
C
0
Base to emitter voltage V
BE
(V)
–2.0
–1.6
– 0.4
–1.2
– 0.8
0
–10
–8
–6
–4
–2
T
C
=100C
25C
V
CE
=–4V
–25C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=10
25C
–25C
T
C
=100C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
3
10
30
100
300
1000
3000
10000
V
CE
=–4V
T
C
=100C
25C
–25C
F
F
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
3
10
30
100
300
1000
3000
10000
V
=–5V
f=10MHz
T
C
=25C
T
T
–1
–10
–100
–1000
–3
–30
–300
– 0.01
–10
–1
– 0.1
– 0.03
– 0.3
–3
Non repetitive
pulse
T
C
=25C
t=1ms
2
2
I
CP
I
C
10ms
300ms
Collector to emitter voltage V
CE
(V)
C
C
10
–4
10
10
–3
10
–1
10
–2
1
10
3
10
2
10
4
10
–2
10
–1
1
10
10
3
10
2
(1)
(2)
(1) Without heat sink
(2) With a 50
×
50
×
2mm Al heat sink
Time t (s)
T
t
(
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