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參數(shù)資料
| 型號： | 2SD1252AR |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | N-G1, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 247K |
| 代理商： | 2SD1252AR |
2SD1252, 2SD1252A
2
SJD00169BED
■ Electrical Characteristics T
C = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SD1252
VCEO
IC
= 30 mA, I
B
= 0
60
V
(Base open)
2SD1252A
80
Base-emitter voltage
VBE
VCE = 4 V, IC = 3 A
1.8
V
Collector-emitter cutoff
2SD1252
ICES
VCE =
60 V, V
BE = 0
200
A
current (E-B short)
2SD1252A
VCE = 80 V, VBE = 0
200
Collector-emitter cutoff
2SD1252
ICEO
VCE = 30 V, IB = 0
300
A
current (Base open)
2SD1252A
VCE =
40 V, I
B = 0
300
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
1
mA
Forward current transfer ratio
hFE1 *
VCE = 4 V, IC = 1 A
40
250
hFE2
VCE
= 4 V, I
C
= 3 A10
Collector-emitter saturation voltage
VCE(sat)
IC = 3 A, IB = 0.375 A
1.2
V
Transition frequency
2SD1252
fT
VCE = 5 V, IC = 0.5 A, f = 10 MHz
30
MHz
2SD1252A
25
Turn-on time
ton
IC
= 1 A
0.5
s
Strage time
tstg
IB1 = 0.1 A, IB2 = 0.1 A
2.5
s
Fall time
tf
VCC = 50 V
0.4
s
Rank
R
Q
P
hFE1
40 to 90
70 to 150
120 to 250
This product complies with the RoHS Directive (EU 2002/95/EC).
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1252P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-221VAR |
| 2SD1252Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-221VAR |
| 2SD1252R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-221VAR |
| 2SD1253 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon NPN Triple Diffusion Planar Type |
| 2SD1253/2SD1253A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SD1253. 2SD1253A - NPN Transistor |
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