參數(shù)資料
型號: 2SD1253A
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon PNP epitaxial planar type(For power amplification)
中文描述: 4 A, 80 V, NPN, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, N-G1, 3 PIN
文件頁數(shù): 2/2頁
文件大?。?/td> 49K
代理商: 2SD1253A
2
Power Transistors
2SB930, 2SB930A
P
C
— Ta
I
C
— V
CE
I
C
— V
BE
V
CE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
Area of safe operation (ASO)
R
th(t)
— t
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
5
45
35
25
15
(1) T
=Ta
(2) With a 50
×
50
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
(1)
(3)
(2)
Ambient temperature Ta (C)
C
C
0
–12
–10
–8
–2
–6
–4
0
–6
–5
–4
–3
–2
–1
T
C
=25C
–100mA
–80mA
–60mA
–40mA
–20mA
–10mA
–8mA
–5mA
I
B
=–120mA
Collector to emitter voltage V
CE
(V)
C
C
0
Base to emitter voltage V
BE
(V)
–2.0
–1.6
– 0.4
–1.2
– 0.8
0
–10
–8
–6
–4
–2
T
C
=100C
–25C
25C
V
CE
=–4V
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=10
25C
T
C
=100C
–25C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
3
10
30
100
300
1000
3000
10000
V
CE
=–4V
T
C
=100C
25C
–25C
F
F
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
3
10
30
100
300
1000
3000
10000
V
=–5V
f=1MHz
T
C
=25C
T
T
–1
–10
–100
–1000
–3
–30
–300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
Non repetitive pulse
T
C
=25C
10ms
t=1ms
I
CP
I
C
300ms
Collector to emitter voltage V
CE
(V)
C
C
10
–4
10
10
–3
10
–1
10
–2
1
10
3
10
2
10
4
10
–2
10
–1
1
10
10
3
10
2
(1)
(2)
(1) Without heat sink
(2) With a 50
×
50
×
2mm Al heat sink
Time t (s)
T
t
(
相關(guān)PDF資料
PDF描述
2SB931 Silicon PNP epitaxial planar type(For power switching)
2SB932 Silicon PNP epitaxial planar type(For power switching)
2SD1255 Silicon PNP epitaxial planar type(For power switching)
2SB933 Silicon PNP epitaxial planar type(For power switching)
2SB934 Silicon PNP epitaxial planar type
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