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參數(shù)資料
| 型號(hào)： | 2SD1260Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 243K |
| 代理商： | 2SD1260Q |
2SD1260, 2SD1260A
2
SJD00176BED
VCE(sat) IC
hFE IC
Cob VCB
PC Ta
IC VCE
IC VBE
0
160
40
120
80
10
30
20
40
Collector
power
dissipation
P
C
(W
)
Ambient temperature T
a (°C)
(1)TC=Ta
(2)With a 50
×50×2mm
Al heat sink
(3)Without heat sink
(PC=1.3W)
(1)
(3)
(2)
06
15
24
3
0
1
2
3
5
4
Collector
current
I
C
(A
)
Collector-emitter voltage V
CE (V)
TC=25C
IB=2.0mA
0.2mA
0.4mA
0.6mA
0.8mA
1.0mA
1.2mA
1.4mA
1.6mA
1.8mA
0
2
4
6
10
8
0
3.2
0.8
2.4
1.6
Base-emitter voltage V
BE (V)
Collector
current
I
C
(A
)
VCE=4V
TC=100C
–25C
25C
0.01
0.1
1
10
100
0.1
1
10
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (A)
IC/IB=250
100C
25C
TC=–25C
0.01
0.1
1
10
102
103
104
105
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
VCE=4V
25C
–25C
TC=100C
0.1
1
10
100
1
10
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
Collector-base voltage V
CB (V)
102
104
103
IE=0
f=1MHz
TC=25C
0.01
1
0.1
1
10
100
10
100
1000
Collector
current
I
C
(A
)
Collector-emitter voltage V
CE (V)
Non repetitive pulse
TC=25C
ICP
IC
t=10ms
t=1ms
t=300ms
2SD1260
2SD1260A
Safe operation area
Rth t
102
101
1
10
103
102
103
104
102
10
1
101
103
102
104
Time t (s)
Thermal
resistance
R
th
(°
C/W)
(1)
(2)
(1)Without heat sink
(2)With a 50
×50×2mm Al heat sink
This product complies with the RoHS Directive (EU 2002/95/EC).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1260R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | TO-221VAR |
| 2SD1261 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type Darlington(For power amplification and switching) |
| 2SD1261/2SD1261A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SD1261. 2SD1261A - NPN Transistor Darlington |
| 2SD1261A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type Darlington(For power amplification and switching) |
| 2SD1261AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | TO-221VAR |
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