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SILICON POWER TRANSISTOR
2SD1286-Z
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. D18287EJ3V0DS00 (3rd edition)
(Previous No. TC-1669A)
Date Published July 2006 NS CP(K)
Printed in Japan
1985, 2006
The mark <R> shows major revised points.
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DESCRIPTION
The 2SD1286-Z is designed for Switching, especially in Hybrid
Integrated Circuits.
FEATURES
High hFE = 2000 to 30000
Complement to 2SB963-Z
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
60
V
Base to Emitter Voltage
VEBO
8
V
Collector Current (DC)
IC(DC)
1
A
Collector Current (pulse)
Note 1
IC(pulse)
2
A
Total Power Dissipation (TA = 25
°C)
Note 2
PT
2.0
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 7.5 cm
2 × 0.7 mm
PACKAGE DRAWING (Unit: mm)
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5
TYP.
0.15 ±0.15
2.3 ±0.3
5.5
±0.2
TO-252 (MP-3Z)
1. Base
2. Collector
3. Emitter
4. Collector Fin
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
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