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參數(shù)資料
| 型號： | 2SD1323P |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 35 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220, FULL PACK-3 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 166K |
| 代理商： | 2SD1323P |
A
mA
A
mA
V
pF
s
Rthj-case
Rthj-amb
15
175
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
°C/W
-1
-500
-50
-1
80
-0.75
-1.5
-1.45
-2.2
-1.45
20
30
90
20
15
250
20
3
0.5
1.3
2N5151
2N5153
Document Number 3071
Issue 1
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
ICES
ICEV
ICEO
IEBO
VCEO(SUS)
VCE(sat)
VBE(sat)
VBE
hFE
CCBO
hFE
ton
toff
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter Voltage
DC Current Gain
Collector Base Capacitance
Small Signal Current Gain
Turn On Time
Turn Off Time
VCE = -60V
VBE = 0
VCE = -100V
VBE = 0
VCE = -60V
Tcase = 150°C
VBE = 2V
VCE = -40V
IB = 0
VEB = -4V
IC = 0
VEB = -5.5V
IC = 0
IC = -100mA
IB = 0
IC = -2.5A
IB = -250mA
IC = -5A
IB = -500mA
IC = -2.5A
IB = -250mA
IC = -5A
IB = -500mA
IC = -2.5A
VCE = -5V
IC = -50mA
VCE = -5V
IC = -2.5A
VCE = -5V
IC = -5A
VCE = -5v
Tcase = -55°C
IC =2.5A
VCE = -5V
IE = 0
VCB = -10V
f = 1MHz
IC = -0.1A
VCE = -5V
f = 1KHz
IC = -0.5A
VCE = -5v
f = 20MHz
IC = -5A
VCC = 30v
IB1 = -0.5A
IC = -5A
VCC = 30V
IB1=-IB2 = 0.5A
ELECTRICAL CHARACTERISTICS FOR 2N5151 (Tcase = 25°C unless otherwise stated)
* Pulse test tp = 300s , δ < 2%
THERMAL DATA
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PDF描述 |
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| 2SD1323 | 4 A, 35 V, NPN, Si, POWER TRANSISTOR, TO-220F |
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| 2SD1330T | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1330S | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1330R | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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| 2SD1325 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANSISTOR TO-220FA 50V 2A 35W BCE |
| 2SD1326 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANSISTOR TO-220FA 50V 4A 40W BCE |
| 2SD1328 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD132800L | 功能描述:TRANS NPN LV AMP 20VCED MINI 3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD13280RL | 功能描述:TRANS NPN LV AMP 20VCEO MINI 3P RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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