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參數(shù)資料
| 型號(hào)： | 2SD1368CB |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | UPAK-3 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 39K |
| 代理商： | 2SD1368CB |
2SD1368
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
6V
Collector current
I
C
1A
Collector peak current
i
C(peak)*
1
1.5
A
Collector power dissipation
P
C*
2
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
100
—
V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
50
—
V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
6—
—
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
0.1
AV
CB = 80 V, IE = 0
Emitter cutoff current
I
EBO
—
0.1
AV
EB = 4 V, IC = 0
DC current transfer ratio
h
FE*
1
100
—
500
V
CE = 2 V, IC = 0.1 A
Collector to emitter saturation
voltage
V
CE(sat)
—
0.3
V
I
C = 1 A, IB = 0.1 A, Pulse
Base to emitter saturation
voltage
V
BE(sat)
—
1.2
V
I
C = 1 A, IB = 0.1 A, Pulse
Gain bandwidth product
f
T
—
100
—
MHz
V
CE = 2 V, IC = 10 mA, Pulse
Collector output capacitance
Cob
—
20
—
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Note:
1. The 2SD1368 is grouped by h
FE as follows.
Mark
CA
CB
CC
h
FE
100 to 200
160 to 320
250 to 500
See characteristic curves of 2SD789.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1368CBTL-E | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 50V 1A 4-Pin(3+Tab) UPAK T/R Cut Tape |
| 2SD1379 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD1383K | 制造商:JVC Worldwide 功能描述:SUB ONLY SI.TRANSISTOR 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1383KT146 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD1383KT146B | 功能描述:達(dá)林頓晶體管 NPN 32V 0.3A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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