參數(shù)資料
型號: 2SD1385
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon NPN triple diffusion planer type(For low-frequency output amplification)
中文描述: 100 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: M-A1, 3 PIN
文件頁數(shù): 2/2頁
文件大?。?/td> 37K
代理商: 2SD1385
2
Transistor
2SD1385
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
E
C
ob
— V
CB
0
12
10
8
2
6
4
0
120
100
80
60
40
20
Ta=25C
0.9mA
0.3mA
0.1mA
0.2mA
I
B
=1.0mA
Collector to emitter voltage V
CE
(V)
C
C
0.1
1
10
100
0.3
Collector current I
C
(mA)
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
25C
–25C
Ta=75C
C
C
0.1
1
10
100
0.3
Collector current I
C
(mA)
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=–25C
25C
75C
B
B
0.1
1
10
100
30.
Collector current I
C
(mA)
3
20
0
12
10
8
6
4
2
V
CE
=5V
Ta=75C
25C
–25C
F
F
Emitter current I
E
(mA)
T
T
– 1
–10
–100
–1000
– 3
–30
–300
0
60
50
40
30
20
10
V
=30V
Ta=25C
10
Collector to base voltage V
CB
(V)
30
100
300
1000
0
12
10
8
6
4
2
I
=0
f=1MHz
Ta=25C
C
o
0
200
160
40
120
80
0
1.2
1.0
0.8
0.6
0.4
0.2
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
C
C
相關(guān)PDF資料
PDF描述
2SD1392 NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR
2SD1396 NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR FOR HORIZONTAL OUTPUT (BUILT-IN DAMPER DIODE)
2SD1399 NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR FOR HORIZONTAL OUTPUT (BUILT-IN DAMPER DIODE)
2SD1400 NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR FOR CTV HORIZONTAL DEFLECTION OUTPUT
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